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Concepts of ferrovalley material and anomalous valley Hall effect

Tong, Wen-Yi ; Gong, Shi-Jing ; Wan, Xiangang ; Duan, Chun-Gang

Nature communications, 2016-12, Vol.7 (1), p.13612-13612, Article 13612 [同儕審閱期刊]

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  • 題名:
    Concepts of ferrovalley material and anomalous valley Hall effect
  • 著者: Tong, Wen-Yi ; Gong, Shi-Jing ; Wan, Xiangang ; Duan, Chun-Gang
  • 所屬期刊: Nature communications, 2016-12, Vol.7 (1), p.13612-13612, Article 13612
  • 描述: Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage, as well as electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization, or ferromagnetic materials with spontaneous spin polarization, here we introduce a new member of ferroic family, that is, a ferrovalley material with spontaneous valley polarization. Combining a two-band k·p model with first-principles calculations, we show that 2H-VSe monolayer, where the spin-orbit coupling coexists with the intrinsic exchange interaction of transition-metal d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and, more interestingly, anomalous valley Hall effect. On account of the latter, functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory and valley filter, are contemplated for valleytronic applications.
  • 出版者: England: Nature Publishing Group
  • 語言: 英文
  • 識別號: ISSN: 2041-1723
    EISSN: 2041-1723
    DOI: 10.1038/ncomms13612
    PMID: 27982088
  • 資源來源: Publicly Available Content Database
    Directory of Open Access Journals
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