Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC

• 著者: Fan, Junqing ; Jiang, Liudi ; Zhong, Le ; Gowers, Robert P. ; Morgan, Katrina A. ; de Groot, C.H.
• 主題: Amorphous SiC ; AMORPHOUS STRUCTURE ; Approximation ; Co-Sputter ; Copper nanoparticles ; DIELECTRIC CONSTANT ; Electrical conduction ; ELECTRICAL PROPERTIES ; Electrodes ; MATHEMATICAL ANALYSIS ; Microstructure ; MICROSTRUCTURES ; PROPERTIES ; Schottky emission ; Silicon carbide ; SPUTTERING
• 所屬期刊: Materials letters, 2016-09, Vol.178, p.60-63
• 描述: The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanism. Dielectric constants of the Cu embedded amorphous SiC composites were measured from purposely fabricated micro-capacitors using Cu embedded amorphous SiC composites as the dielectric layer, showing a decrease in dielectric constant with increasing Cu volume%. The electrical contacts between metal electrodes, i.e. Cu and Au, and Cu embedded amorphous SiC composites resulted in Schottky emission. •Cu embedded a-SiC composites with Cu nanoparticles sizes up to 2.5nm were obtained.•Electrical conduction follows the effective medium model in below percolation regime.•Dielectric constants of a-SiC:Cu composites were measured to be 4.6–7.5.•Metal/a-SiC:Cu contacts are described by Schottky emission with Fermi level pinning.
  
• 出版者: Elsevier B.V
  
• 語言: 英文
  
• 識別號: ISSN: 0167-577X
  EISSN: 1873-4979
  DOI: 10.1016/j.matlet.2016.04.144
  
• 資源來源: Elsevier ScienceDirect Journals Complete